Near-infrared hybrid plasmonic multiple quantum well nanowire lasers

Multi-quantum-well nanowire heterostructures for wavelength-controlled lasers.

Rational design and synthesis of nanowires with increasingly complex structures can yield enhanced and/or novel electronic and photonic functions. For example, Ge/Si core/shell nanowires have exhibited substantially higher performance as field-effect transistors and low-temperature quantum devices compared with homogeneous materials, and nano-roughened Si nanowires were recently shown to have a...

Design and Room-Temperature Operation of GaAs/AlGaAs Multiple Quantum Well Nanowire Lasers.

We present the design and room-temperature lasing characteristics of single nanowires containing coaxial GaAs/AlGaAs multiple quantum well (MQW) active regions. The TE01 mode, which has a doughnut-shaped intensity profile and is polarized predominantly in-plane to the MQWs, is predicted to lase in these nanowire heterostructures and is thus chosen for the cavity design. Through gain and loss ca...

Hybrid III-V Silicon Quantum Dot and Quantum Well Lasers

The silicon photonics field is advancing rapidly, with many new devices demonstrated recently [1]. Demonstrations have shown significantly improved performance that is now approaching that of devices on native InP substrates. In addition to the many passive devices, including AWGs, isolators, and circulators, active devices including lasers, modulators, amplifiers and photodetectors (Fig. 1) ar...

Nanowire terahertz quantum cascade lasers

Emission wavelength of AlGaAsGaAs multiple quantum well lasers